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| (R) STTH1002C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (typ) trr (typ) FEATURES AND BENEFITS Up to 2 x 8A 200 V 175 C 0.78 V 20 ns A1 K A2 A2 K A1 A1 K A2 Suited for SMPS Low losses Low forward and reverse recovery times Insulated package: TO-220FPAB High junction temperature Low leakage current TO-220AB STTH1002CT I2PAK STTH1002CR K K A2 K A1 A2 DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, D2PAK, TO-220AB, TO220-FPAB and I2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM IF(RMS) IF(AV) Repetitive peak reverse voltage RMS forward current Average forward current =0.5 TO-220FPAB STTH1002CFP K D2PAK STTH1002CG A1 K A1 A2 DPAK STTH1002CB Value 200 2 2 Unit V A A TO-220AB / TO-220FPAB / I PAK / D PAK / DPAK TO-220AB / I PAK / D2PAK / DPAK 2 20 10 5 10 8 16 5 10 8 16 50 - 65 + 175 175 Tc = 155C Tc = 150C Tc = 135C Tc = 125C Per diode Per device Per diode Per device Per diode Per device Per diode Per device TO-220FPAB Tc = 140C Tc = 120C Tc = 110C Tc = 75C IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms Sinusoidal A C C 1/8 March 2004 - Ed: 4 STTH1002C THERMAL PARAMETERS Symbol Rth (j-c) Junction to case Parameter TO-220AB / I PAK / D PAK / DPAK TO-220FPAB Rth (j-c) Coupling 2 2 2 2 Maximum Per diode Per device Per diode Per device 4.0 2.5 6.5 5 1.0 3.5 Unit C/W TO-220AB / I PAK / D PAK / DPAK TO-220FPAB C/W When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 150C Tj = 150C Pulse test: * tp = 5ms, < 2% ** tp = 380s, < 2% Min. Typ. Max. 5 Unit A VR = VRRM 3 IF = 5 A IF = 10 A IF = 5 A IF = 10 A 0.78 40 1.1 1.25 0.89 1.05 V VF** To evaluate the maximum conduction losses use the following equation : P = 0.73 x IF(AV) + 0.032 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tests conditions IF = 1 A VR = 30V dIF/dt = 100 A/s IF = 5 A VR = 160V dIF/dt = 200 A/s IF = 5 A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 5 A dIF/dt = 100 A/s 2.4 Min. Typ. 20 5.9 Max. 25 7.6 110 Unit ns A ns V 2/8 STTH1002C Fig. 1: Peak current versus duty cycle (per diode). IM(A) 60 Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode). IFM(A) 100 90 50 80 40 70 60 30 P = 10W IM T 50 40 Tj=150C 20 P = 5W =tp/T tp 30 20 Tj=25C 10 P = 2W 10 VFM(V) 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.00 Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100 90 80 70 60 50 40 30 Tj=25C Tj=150C Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, I2PAK, D2PAK, DPAK). Zth(j-c)/Rth(j-c) 1.0 Single pulse 20 10 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 VFM(V) 0.1 1.E-03 1.E-02 tp(s) 1.E-01 1.E+00 Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 Fig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C Single pulse tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 10 0 50 VR(V) 100 150 200 3/8 STTH1002C Fig. 5: Reverse recovery charges versus dIF/dt (typical values, per diode). Qrr(nC) 240 220 200 180 160 140 120 100 80 60 40 20 0 10 Tj=25C Tj=125C IF=5A VR=160V Fig. 6: Reverse recovery time versus dIF/dt (typical values, per diode). trr(ns) 80 70 60 Tj=125C IF=5A VR=160V 50 40 30 20 Tj=25C 10 dIF/dt(A/s) 100 1000 dIF/dt(A/s) 0 10 100 1000 Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode). IRM(A) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 10 100 1000 Tj=25C IF=5A VR=160V Fig. 8: Dynamic parameters versus junction temperature. Qrr;IRM[Tj]/Qrr;IRM[Tj=125C] 1.4 IF=5A VR=160V 1.2 1.0 0.8 Tj=125C IRM Qrr 0.6 0.4 0.2 dIF/dt(A/s) 0.0 25 50 75 Tj(C) 100 125 150 Fig. 9-1: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU: 35m) for D2PAK. Rth(j-a)(C/W) 80 70 60 Fig. 9-2: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU: 35m) for DPAK. Rth(j-a)(C/W) 100 90 80 70 50 40 30 20 60 50 40 30 20 10 S(Cu)(cm) 0 0 2 4 6 8 10 12 14 16 18 20 10 0 0 2 4 6 S(Cu)(cm) 8 10 12 14 16 18 20 4/8 STTH1002C Ordering code STTH1002CB STTH1002CB-TR STTH1002CT STTH1002CG STTH1002CG-TR STTH1002CR STTH1002CFP Marking STTH1002CB STTH1002CB STTH1002CT STTH1002CG STTH1002CG STTH1002CR STTH1002CFP Package DPAK DPAK TO-220AB D PAK D PAK I PAK TO-220FPAB 2 2 2 Weight 0.3 g 0.3 g 2.23 g 1.48 g 1.48g 1.49 g 1.70 g Base qty 75 2500 50 50 1000 50 50 Delivery mode Tube Tape & reel Tube Tube Tape & reel Tube Tube PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.60 0 Max 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00 8 Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.023 0 Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8 0.80 typ. 0.031 typ. FOOTPRINT 6.7 6.7 3 3 1.6 2.3 2.3 1.6 5/8 STTH1002C PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8 A A1 D A2 B B2 L L3 A1 B2 B G A2 C R C C2 D E G L M * L2 V2 L3 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 6/8 STTH1002C PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A E L2 c2 A A1 b b1 b2 D c c2 D L1 b2 L b1 b e PACKAGE MECHANICAL DATA TO-220FPAB A1 e E L L1 L2 c REF. A H B Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 7/8 STTH1002C PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. Epoxy meets UL94,V0 Cooling method: by conduction (method C) Recommended torque value (TO-220AB): 0.8 N.m. Maximum torque value (TO-220AB): 1.0 N.m. Recommended torque value (TO-220FPAB): 0.55 N.m. Maximum torque value (TO-220FPAB): 0.7 N.m. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 8/8 |
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